News & Analysis
Tell us What You Think
We want to know what you thought about this News. Let us know by adding a comment.
GlobalFoundries to make Freescale's flash technology
Mark LaPedus
9/1/2010 9:48 PM EDT
SANTA CLARA, Calif. - At the inaugural Global Technology Conference here, GlobalFoundries Inc. and Freescale Semiconductor Inc. announced plans to bring a new class of thin film storage (TFS) flash memory products to market on 90-nm technology.
The technology is expected to be deployed in Freescale's microcontrollers (MCUs).
Freescale’s TFS technology can be used in both the ColdFire and Kinetis families of 32-bit MCUs.
TFS is based on something called FlexMemory. This is a nonvolatile storage based on Freescale's nanocrystalline thin-film floating gate memory cells that enable write speeds as fast as 100 microseconds and up to 4.4 million write/erase cycles over the full voltage range of 1.71-to-3.6 volts.
This will be manufactured on GlobalFoundries' 90-nm technology. Early test chips are already in production at its Fab 7 plant in Singapore, with technology certification expected to complete in the first half of 2011.
90-nm TFS technology differs from other conventional nonvolatile memory architectures in that it uses a silicon nano-crystal technology to provide a scalable and industry-leading technology with bit-level reliability, speed, power and area.
The technology is expected to be deployed in Freescale's microcontrollers (MCUs).
Freescale’s TFS technology can be used in both the ColdFire and Kinetis families of 32-bit MCUs.
TFS is based on something called FlexMemory. This is a nonvolatile storage based on Freescale's nanocrystalline thin-film floating gate memory cells that enable write speeds as fast as 100 microseconds and up to 4.4 million write/erase cycles over the full voltage range of 1.71-to-3.6 volts.
This will be manufactured on GlobalFoundries' 90-nm technology. Early test chips are already in production at its Fab 7 plant in Singapore, with technology certification expected to complete in the first half of 2011.
90-nm TFS technology differs from other conventional nonvolatile memory architectures in that it uses a silicon nano-crystal technology to provide a scalable and industry-leading technology with bit-level reliability, speed, power and area.
|
|
|
|
|
Navigate to related information
