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Elpida enters NAND fray
Mark LaPedus
9/2/2010 2:35 PM EDT
SAN JOSE, Calif. - Japan's Elpida Memory Inc. has made its formal entry into the NAND flash market.
Will Elpida change the competitive NAND landscape?
The company and its NAND partner, Spansion Inc., claim that they have devised the industry's first charge-trapping 1.8-volt, 4-gigabit single-level cell (SLC) NAND flash memory.
This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima 300-mm factory.
Elpida plans to combine NAND flash memory with mobile RAM for sale in mobile consumer products. Spansion is developing NAND solutions for the embedded and select wireless markets and continues to produce and sell its NOR flash memory products.
Elpida plans to start shipping samples of the 1.8 V 4-gigabit NAND flash memory during the fourth quarter of 2010, will begin mass production during the first quarter of 2011.
It is developing 2- and 1-Gbit density products in addition to its 4-Gbit products. Spansion will ship samples in the first quarter of 2011 and will begin production in the second quarter of 2011. Both companies are also developing 3.0 V products and plan to develop 1-, 2-, and 4-Gbit products.
In June, Elpida and Spansion expanded their existing relationship for joint development of NAND process technology and products to include a foundry services agreement for NAND flash memory.
Elpida also secured a non-exclusive license to Spansion’s NAND IP based on MirrorBit charge-trapping technology. Elpida will produce the NAND products at its 300-mm Hiroshima wafer fab. Each company will separately market products to their customers.
As part of the expanded alliance, the companies intend to identify additional areas of cooperation, such as NOR flash memory products and manufacturing.
Will Elpida change the competitive NAND landscape?
The company and its NAND partner, Spansion Inc., claim that they have devised the industry's first charge-trapping 1.8-volt, 4-gigabit single-level cell (SLC) NAND flash memory.
This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima 300-mm factory.
Elpida plans to combine NAND flash memory with mobile RAM for sale in mobile consumer products. Spansion is developing NAND solutions for the embedded and select wireless markets and continues to produce and sell its NOR flash memory products.
Elpida plans to start shipping samples of the 1.8 V 4-gigabit NAND flash memory during the fourth quarter of 2010, will begin mass production during the first quarter of 2011.
It is developing 2- and 1-Gbit density products in addition to its 4-Gbit products. Spansion will ship samples in the first quarter of 2011 and will begin production in the second quarter of 2011. Both companies are also developing 3.0 V products and plan to develop 1-, 2-, and 4-Gbit products.
In June, Elpida and Spansion expanded their existing relationship for joint development of NAND process technology and products to include a foundry services agreement for NAND flash memory.
Elpida also secured a non-exclusive license to Spansion’s NAND IP based on MirrorBit charge-trapping technology. Elpida will produce the NAND products at its 300-mm Hiroshima wafer fab. Each company will separately market products to their customers.
As part of the expanded alliance, the companies intend to identify additional areas of cooperation, such as NOR flash memory products and manufacturing.
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