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Plessey plans to run GaN, SiGe at UK fab
Peter Clarke
9/21/2010 5:05 AM EDT
LONDON – Plessey Semiconductors Ltd., a once-famous semiconductor name reborn as a management-owned buy-out company, is planning to extend its chip manufacturing capabilities to include gallium nitride and silicon-germanium.
Plessey (Plymouth, England) which already runs bipolar and CMOS manufacturing process technologies down to 0.35-micron, plans to be run gallium nitride on its 6-inch production line in its Roborough fab this year, according to CEO Michael LeGoff.
This will be followed by the introduction of silicon-germanium processing for BiCMOS 70- to 90-GHz RF device capability soon after.
Speaking at a two-day conference in London organized by the National Microelectronics Institute LeGoff said he expected Plessey to achieve £17 million (about $26.5 million).
LeGoff said Plessey has received support to start running high brightness LEDs on gallium nitride and would also be using the process technology for discrete power devices. In its CMOS process the company has developed high-speed image sensing for such applications as industrial and dental imaging. LeGoff that Plessey would be focusing on the RF, power and sensors markets.
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