IBM active in PCM at IEDM
IBM is continuing to conduct its own research and has three papers coming up at the International Electron Devices Meeting to be held in San Francisco, Calif. Dec. 6 to 8.
One paper, identified by IEDM session number 29.4, discusses the voltage polarity effects in GST-based phase-change memory while a second (28.6) looks at the impact of hole-induced electromigration on the cycling endurance of PCM. The third paper (29.5) discusses noise in multibit PCM memory cells and reports a bit error rate of 1 in 10^4 with a three-bit memory cell.
"We do have IBM research into PCM. And we do have flash today. NAND flash should make progress into the consumer space and is making tracks in the server space," said Menon. "And then there is a lot of other technologies including MRAM and a bit further out IBM thinks magnetic race-track memory, there's ferroelectric and so on. And we are very bullish about PCM in next three to five years time frame and then magnetic race-track memory in the longer term."
In terms of other research topics to help PCM make progress Menon said IBM is working on materials, on 3-D packaging and the implications of that for memory cell structure. "We do believe PCM does have the ability to scale beyond where flash can scale to. I would say flash will begin to struggle below 22-nm."