Samsung claims top density 30-nm LPDDR2 DRAM
12/2/2010 1:29 AM EST
SAN FRANCISCO—Claiming an industry first, Samsung Electronics Co. Ltd. said Thursday (Dec. 2) it has began sampling last month monolithic 4-gigabit (Gb), low power double-data-rate 2 (LPDDR2) DRAM using 30-nm class technology.
The chip will be used in high-end mobile applications such as smartphones and tablet PCs, Samsung (Seoul, South Korea) said.
The new 4Gb LPDDR2 DRAM can transfer up to 1,066 megabits per second (Mbps), which approaches the performance of memory solutions for PC applications, according to Samsung. It more than doubles the performance of the industry's previous mobile DRAM. MDDR, which operates between 333Mbps and 400Mbps, according to the firm.
“The mobile device market is gaining momentum with the advent of tablet PCs, which is adding significantly to the already surging smartphone segment,” said Jun-Young Jeon, vice president of Samsung'smemory product planning team, in a statement. “Samsung will work closely with mobile device designers to bring high-performance, high-density mobile solutions to market as rapidly as possible.”
Starting this month, Samsung said it will begin sampling 8Gb LPDDR2 DRAM by stacking two 4Gb chips in a single package. It is expected that 8Gb will become the mainstream density for the mobile DRAM market next year, Samsung said.
Until now, an 8Gb (1GB) LPDDR2 DRAM used four 2Gb chips, according to Samsung. With the new Green 4Gb LPDDR2, the 8Gb solution offers a 20 percent package height reduction (0.8mm vs. 1.0mm) and will save 25 percent of the power consumed by the previous 8Gb package that used four 2Gb chips, the company said.
Samsung developed a 2Gb LPDDR2 DRAM chip based on 40nm-class technology in February and has been providing that solution since April to cope with the rising demand for advanced mobile DRAMs. Samsung also plans to provide 16Gb (2GB) LPDDR2 DRAM by stacking four of the 4Gb chips, as capacity needs continue to grow, the company said.
(Seoul, South Korea) said.