Samsung trials DDR4 DRAM module

LONDON – Samsung Electronics Co. Ltd. has announced the completion of a DDR4 DRAM module using 30-nm class process technology, that is somewhere between 30- and 39-nm.

The DDR4 standard is not yet finalized but Samsung's prototype DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2-V. The DDR3 standard only goes to down to 1.35- and 1.5-V and using the same 30-nm-class process technology supports speeds of up to 1.6-Gbits per second.

When applied to a notebook computer the use of 1.2-V DDR4 module reduces power consumption by 40 percent compared to a 1.5-V DDR3 module, Samsung claimed.

The module makes use of something called pseudo open drain (POD), a technology that has been adapted to graphic DRAMs to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.

Further gains from a new circuit architecture could enable Samsung's DDR4 to run up to 3.2-Gbps, compared to typical speeds of 1.6-Gbps for DDR3 and 800-Mbps for DDR2.

Late last month, Samsung provided 1.2-V 2-Gbyte DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.

Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.

"The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application," said Dong Soo Jun, president, memory division, Samsung Electronics.


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