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resistion
Additional exposure(s) needed for cuts.
resistion
LER still seems inherently difficult to solve.
IBM, JSR roll out self-assembly litho
Mark Lapedus
3/1/2011 10:37 AM EST
SAN JOSE, Calif. - JSR Corp., along with its U.S. operations, JSR Micro Inc., have rolled out a new directed self-assembly (DSA) technology for the sub-20-nm half-pitch node.
Developed as part of an ongoing research agreement with IBM Corp., the new technology eliminates dual exposure steps and is compatible with conventional 193-nm lithography equipment.
At SPIE last year, more than 10 papers on the conference schedule focused on directed self-assembly, a technology that combines lithographically defined substrates and self-assembled polymers. Research has focused on using lithography to alter the surface of a silicon wafer, then adding block co-polymers that assemble themselves into regular arrays along the defined pattern.
Directed self-assembly first landed on the ITRS in 2007 as a potential solution for leading-edge, critical layer lithography. The technology is still part of the ITRS as of the 2009 edition.
Still in the R&D stage, DSA is aimed for a range of devices, such as cylindrical patterns, vertical cylindrical patterns, nanowire arrays, FinFETs, among others, according to a paper from IBM at SPIE here.
One of the first applications appears to be the fabrication of a replicator in nano-imprint lithography. With a DSA-enable replicator, nano-imprint can be used for bit-pattern media applications in disk drives, according to IBM.
The continued growth of the semiconductor industry and shrinking design nodes has spurred the development of new innovative lithography patterns. Using a proprietary polymer system, that differs from existing and widely used block co-polymer technology, this newly designed structure from JSR and IBM have shown good test results for 22-nm half-pitch patterning and allows for phase separation, resulting in good profiles and more flexible use in both logic and memory applications.
“This DSA technology is a highly viable solution for the key sub-20-nm half-pitch threshold where it can become complementary to prevailing technologies such as EUV,” said JSR Micro President Eric R. Johnson, in a statement. “We see the potential for its integration with a broad application set and are committed to our ongoing relationship with IBM to develop impactful lithography technologies.”
Details of the DSA technology will be presented in a paper at the upcoming SPIE Advanced Lithography 2011 Symposium here.
Developed as part of an ongoing research agreement with IBM Corp., the new technology eliminates dual exposure steps and is compatible with conventional 193-nm lithography equipment.
At SPIE last year, more than 10 papers on the conference schedule focused on directed self-assembly, a technology that combines lithographically defined substrates and self-assembled polymers. Research has focused on using lithography to alter the surface of a silicon wafer, then adding block co-polymers that assemble themselves into regular arrays along the defined pattern.
Directed self-assembly first landed on the ITRS in 2007 as a potential solution for leading-edge, critical layer lithography. The technology is still part of the ITRS as of the 2009 edition.
Still in the R&D stage, DSA is aimed for a range of devices, such as cylindrical patterns, vertical cylindrical patterns, nanowire arrays, FinFETs, among others, according to a paper from IBM at SPIE here.
One of the first applications appears to be the fabrication of a replicator in nano-imprint lithography. With a DSA-enable replicator, nano-imprint can be used for bit-pattern media applications in disk drives, according to IBM.
The continued growth of the semiconductor industry and shrinking design nodes has spurred the development of new innovative lithography patterns. Using a proprietary polymer system, that differs from existing and widely used block co-polymer technology, this newly designed structure from JSR and IBM have shown good test results for 22-nm half-pitch patterning and allows for phase separation, resulting in good profiles and more flexible use in both logic and memory applications.
“This DSA technology is a highly viable solution for the key sub-20-nm half-pitch threshold where it can become complementary to prevailing technologies such as EUV,” said JSR Micro President Eric R. Johnson, in a statement. “We see the potential for its integration with a broad application set and are committed to our ongoing relationship with IBM to develop impactful lithography technologies.”
Details of the DSA technology will be presented in a paper at the upcoming SPIE Advanced Lithography 2011 Symposium here.
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resistion
3/1/2011 10:59 AM EST
LER still seems inherently difficult to solve.
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resistion
3/1/2011 11:04 AM EST
Additional exposure(s) needed for cuts.
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