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Singfast
I concur with walken1 in that I was surprised that the MOCVD tool was not from ...
walken1
I think it's interesting that it was an AMAT MOCVD tool that was involved in ...
IMEC makes GaN-on-silicon
Peter Clarke
5/26/2011 2:10 AM EDT
BRUSSELS, Belgium – European research institute IMEC
and its partners in a program on gallium-nitride fabrication have produced
device quality GaN/AlGaN layers on 200-mm silicon wafers.
These first GaN devices on 200-mm diameter wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200-mm fabs.
Functional GaN MIS-HEMTs were processed using an advanced MOCVD system from Applied Materials but in general with standard CMOS tools.
Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.
These first GaN devices on 200-mm diameter wafers are an important milestone on the path to cost-effective production of power devices in high-productivity 200-mm fabs.
Functional GaN MIS-HEMTs were processed using an advanced MOCVD system from Applied Materials but in general with standard CMOS tools.
Conventionally, gold is used for ohmic contacts and gate structures in power devices, but it makes GaN processing incompatible with conventional CMOS processing. To overcome this, imec based the ohmic contact formation on an Au-free metallization system, and modified the Schottky gate to a gate dielectric based gold-free metal-insulator-semiconductor (MIS) structure. This introduction of the MISHEMT structure had the added advantage of reducing the high leakage current of conventional HEMTs.
Power devices on 200-mm CMOS-compatible GaN-on-Si.
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Dave.Dykstra
5/26/2011 1:09 PM EDT
Sounds very promising. Hopefully it will be successful in production and we'll see production quantities at reasonable pricing.
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walken1
5/26/2011 1:59 PM EDT
I think it's interesting that it was an AMAT MOCVD tool that was involved in this project and not Veeco or Aixtron (which together make up 97% of the MOCVD market). Kudos to Applied for being strategic in their approach to entering this market.
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Singfast
5/28/2011 2:31 AM EDT
I concur with walken1 in that I was surprised that the MOCVD tool was not from Veeco. Was not aware that Applied works in this space.
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