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resistion
They need to be in the low 20's to compete with South Korea. 25 nm is not ...
double-o-nothing
At this rate, by 2013, they will need to be at 1x nm level already, and by 2015, ...
Elpida says its sampling first 25-nm DRAMs
8/4/2011 1:32 AM EDT
SAN FRANCISCO—Japan's Elpida Memory Inc. this week laid claim to being the first memory supplier to sample DRAMs with circuit line widths of 25 nanometers.
Elpida said it has been sampling 25-nm DRAM since late last month. The announced in May it had developed the industry's first 25-nm DRAM devices.
Elpida said the 25-nm devices are DDR3 [double data rate 3] SDRAM with a memory capacity of 2-gigabits. A 25-nm 4-gigabit DDR3 SDRAM is expected to become commercially available by the end of 2011.
The 25-nm products will be used for PC and server applications, Elpida said. The process will also be used to develop applications for Elpida's mobile RAM for use in various kinds of mobile devices, starting with the growth areas of smart phones and tablet PCs, the company said.
Special features of the 25nm SDRAM include lower current usage—roughly 15 percent less during operation, 20 percent less when on standby—compared with Elpida's current advanced process 30-nm-generation products and one of the highest data transfer rates in the industry, according to Elpida.
Elpida said it has been sampling 25-nm DRAM since late last month. The announced in May it had developed the industry's first 25-nm DRAM devices.
Elpida said the 25-nm devices are DDR3 [double data rate 3] SDRAM with a memory capacity of 2-gigabits. A 25-nm 4-gigabit DDR3 SDRAM is expected to become commercially available by the end of 2011.
The 25-nm products will be used for PC and server applications, Elpida said. The process will also be used to develop applications for Elpida's mobile RAM for use in various kinds of mobile devices, starting with the growth areas of smart phones and tablet PCs, the company said.
Special features of the 25nm SDRAM include lower current usage—roughly 15 percent less during operation, 20 percent less when on standby—compared with Elpida's current advanced process 30-nm-generation products and one of the highest data transfer rates in the industry, according to Elpida.
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resistion
8/4/2011 2:55 AM EDT
Samsung also plans to release 20-nm node (or 20-nm class) DRAM later this year.
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selinz
8/4/2011 1:27 PM EDT
The fact that people are using flash for larger and larger devices will not help to stablize the DRAM industry.
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yalanand
8/5/2011 5:37 AM EDT
@Selinz, what about (spin-transfer torque random access memory ) STT_RAM, will it have any impact on DRAM ?
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resistion
8/5/2011 12:12 PM EDT
Alternative memories like SONOS and ReRAM will become more cost effective even compared to current NAND. The floating gate is difficult to scale 3D. If something like ReRAM can eliminate the transistor and show high performance, that is the thing to watch for.
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resistion
8/5/2011 12:12 PM EDT
Alternative memories like SONOS and ReRAM will become more cost effective even compared to current NAND. The floating gate is difficult to scale 3D. If something like ReRAM can eliminate the transistor and show high performance, that is the thing to watch for.
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double-o-nothing
8/5/2011 9:30 PM EDT
At this rate, by 2013, they will need to be at 1x nm level already, and by 2015, sub-10 nm. Any new lithography technology incurs so many new costs (infrastructure, utilities, resist, inspection, etc.) that several nodes (like 28 nm to 9 nm) would have to be jumped to make up. On the other hand, the resolution improvement is not that significant (~one node) so the entire architecture will evolve along 3d lines to be compatible with existing litho.
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resistion
7/2/2012 10:53 AM EDT
They need to be in the low 20's to compete with South Korea. 25 nm is not competitive enough.
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