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Duane Benson
The Silicon atom is about .24 nm. Carbon is about .14 - a bit more than half as ...
nicolas.mokhoff
pixies: thanks for picking up on misspelled word. Has been corrected.
IBM researchers to report carbon feats at IEDM
Nicolas Mokhoff
10/27/2011 3:43 PM EDT
MANHASSET, NY -- A couple of late submissions to the upcoming IEEE International Electron Devices Meeting will detail record-breaking performance in transistors made from carbon and its derivatives.
IBM researchers will describe record RF performance from transistors made from synthesized graphene. The researchers achieved a 280-GHz cutoff frequency in a 40-nm gate-length FET, the fastest ever reported from synthesized graphene, according to IBM.
The second research paper from IBM outlines the first experimental demonstration of sub-10-nm transistors made from carbon nanotubes. The researchers built devices that achieved more than four times the current density (2.41 mA/µm) of the best competing silicon device, at a low operating voltage of 0.5 V. The researchers speculate that theoretical predictions were exceeded because the transistor gate modulates the charge not only in the channel but in the contact regions as well, which had not been considered previously.
The 2011 IEDM will be held in Washington, DC December 5-7.
IEDM will be on Twitter and on Facebook with regular updates.
IBM researchers will describe record RF performance from transistors made from synthesized graphene. The researchers achieved a 280-GHz cutoff frequency in a 40-nm gate-length FET, the fastest ever reported from synthesized graphene, according to IBM.
The second research paper from IBM outlines the first experimental demonstration of sub-10-nm transistors made from carbon nanotubes. The researchers built devices that achieved more than four times the current density (2.41 mA/µm) of the best competing silicon device, at a low operating voltage of 0.5 V. The researchers speculate that theoretical predictions were exceeded because the transistor gate modulates the charge not only in the channel but in the contact regions as well, which had not been considered previously.
The 2011 IEDM will be held in Washington, DC December 5-7.
IEDM will be on Twitter and on Facebook with regular updates.
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pixies
10/28/2011 4:05 PM EDT
Is "grapheme" a derivative of "graphene"? :)
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wilber_xbox
10/29/2011 12:46 PM EDT
ha ha. Readers have found out so many misspell in EETimes blogs in recent times. Hope it will improve.
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nicolas.mokhoff
10/31/2011 12:03 AM EDT
pixies: thanks for picking up on misspelled word. Has been corrected.
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wilber_xbox
10/29/2011 12:48 PM EDT
Feynman said that there is plenty of room at the bottom. We are hitting the bottom and it is full of surprises. Graphene, CNT, Nanowires, variation of FinFET will compete for the lower technology nodes for sure.
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Duane Benson
10/31/2011 1:08 AM EDT
The Silicon atom is about .24 nm. Carbon is about .14 - a bit more than half as big. It looks like there's still some room to make transistors smaller than the sub-10 nm. Not much though. I don't see any solids with a diameter smaller than carbon so that may be it for the traditional binary logic building block.
It's getting close to time to look for something that will give a couple more states from the same size device.
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