Micron sampling DDR4 DRAM module
5/8/2012 2:30 AM EDT
SAN FRANCISCO—Micron Technology Inc. Monday (May 7) announced development of its first fully functional DDR4 DRAM module.
Micron (Boise, Idaho) said it began sampling the DDR4 module earlier this year and has received feedback from major customers to support quick implementation for applications in 2013.
Co-developed by Taiwan's Nanya Technology Corp. and based on Micron's 30-nm technology, the 4-gigabit DDR4 x8 part is the first piece of Micron's portfolio of DDR4-based modules, which will include RDIMMs, LRDIMMs, 3DS, SODIMMs and UDIMMs (standard and ECC), Micron said. For the soldered down space, x8, x16, and x32 components will also be available, with initial speeds up to 2400 megatransfers per second (MT/s), increasing to the JEDEC-defined 3200 MT/s, Micron said.
"With the JEDEC definition for DDR4 very near finalization, we've put significant effort into ensuring that our first DDR4 product is as JEDEC-compatible as it can be at this final stage of its development," said Brian Shirley, vice president for Micron's DRAM Solutions Group, in a statement. "We've provided samples to key partners in the market place with confidence that the die we give them now is the same die we will take into mass production."
Volume production of the DDR4 module is planned to commence in the fourth quarter, Micron said.