LONDON – EpiGaN NV, a startup spun out of the IMEC research institute in 2010, has officially opened a production facility for gallium nitride on silicon wafers at the Research Campus in Hasselt, Belgium.
Gallium-nitride is expected to enable more efficient power electronics than is possible in silicon and to be used for power supplies, motor drivers and inverters for solar energy technologies and greener transport. By growing an epitaxial layer of GaN on silicon substrates EpiGaN aims to combine the manufacturing scale of mainstream silicon with the extended performance of GaN.
EpiGaN is offering GaN epitaxial layers deposited either on silicon wafers of up to 150-mm diameter or, for specific applications, on SiC. Wafer diameters of 200-mm are under development.
EpiGaN entered the Silicon 60, EE Times'
list of emerging startup companies, at version 13.0 in April 2012, which can be found at http://confidential.eetimes.com/analysis-reports/4371437/EE-Times-60-Emerging-Startups Related links and articles:
Startup EpiGaN powers GaN on silicon wafers
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Transphorm delivers more 600-V GaN power components
GaN power market to rise to $10 million in 2012, says Yole