News & Analysis
Comment
resistion
There were reports of 15 or 16 nm from Hynix and Samsung, but don't know when ...
resistion
They share the fab cost with Toshiba. But it's Toshiba responsible for the ...
SanDisk sampling 19-nm embedded NAND
Dylan McGrath
6/5/2012 2:58 AM EDT
SAN FRANCISCO—SanDisk Corp. said Monday (June 4) it is now building its iNAND Extreme NAND flash memory using 19-nm process technology, the most advanced process technology in use today for memory chips.
In February, SanDisk provided details of its NAND flash implemented at 19-nm at the International Solid State Circuits Conference here.
SanDisk (Milpitas, Calif.) said Monday its 19-nm process technology is being used to enable large-capacity, high-performance embedded NAND devices that are suited for high-end tablets and smartphones.
SanDisk said its iNAND Extreme will be used on reference designs for the Nvidia Tegra 3 4-Plus-1 quad-core processor as a recommended high-performance storage device for high-end tablet and mobile devices using the latest operating systems.
"SanDisk is a key partner for us in showcasing Tegra 3's capabilities,” said Rene Haas, general manager of notebook products at Nvidia, in a statement. "Just as Tegra delivers great performance and battery life in a wide range of mobile devices, iNAND Extreme provides a high performance memory solution to help create a world-class user experience for tablets and mobile devices."
SanDisk’s 128 GB iNAND Extreme comes in a 12-mm by 16-mm package and conforms to the e.MMC 4.5 specification, SanDisk said. It can achieve up to 45-megabyte per second sequential write and 100 MB/sec read speeds, the firm said. Samples of the latest version of iNAND Extreme will be available to customers this month with general availability this summer, SanDisk said.
In February, SanDisk provided details of its NAND flash implemented at 19-nm at the International Solid State Circuits Conference here.
SanDisk (Milpitas, Calif.) said Monday its 19-nm process technology is being used to enable large-capacity, high-performance embedded NAND devices that are suited for high-end tablets and smartphones.
SanDisk said its iNAND Extreme will be used on reference designs for the Nvidia Tegra 3 4-Plus-1 quad-core processor as a recommended high-performance storage device for high-end tablet and mobile devices using the latest operating systems.
"SanDisk is a key partner for us in showcasing Tegra 3's capabilities,” said Rene Haas, general manager of notebook products at Nvidia, in a statement. "Just as Tegra delivers great performance and battery life in a wide range of mobile devices, iNAND Extreme provides a high performance memory solution to help create a world-class user experience for tablets and mobile devices."
SanDisk’s 128 GB iNAND Extreme comes in a 12-mm by 16-mm package and conforms to the e.MMC 4.5 specification, SanDisk said. It can achieve up to 45-megabyte per second sequential write and 100 MB/sec read speeds, the firm said. Samples of the latest version of iNAND Extreme will be available to customers this month with general availability this summer, SanDisk said.
|
|
|
|
|
Navigate to related information
sunny565
6/5/2012 11:51 AM EDT
Good job, Sandisk!
Sign in to Reply
resistion
6/5/2012 1:20 PM EDT
It's really Toshiba's 19 nm process, Sandisk is fabless.
Sign in to Reply
Doc Jones
6/5/2012 7:31 PM EDT
SanDisk has a Fab in Japan
Sign in to Reply
resistion
6/5/2012 9:36 PM EDT
They share the fab cost with Toshiba. But it's Toshiba responsible for the process. Sandisk responsible for a lot of the design.
Sign in to Reply
yalanand
6/5/2012 2:25 PM EDT
45-megabyte per second sequential write and 100 MB/sec read speeds is pretty impressive. Sandisk has done a very impressive job of implementing NAND flash implemented at 19-nm. Who is the closest rival to Sansdisk ?
Sign in to Reply
resistion
6/5/2012 9:47 PM EDT
There were reports of 15 or 16 nm from Hynix and Samsung, but don't know when or if they'll go there.
Sign in to Reply