Kilopass details smaller footprint memory bit cell
9/18/2012 11:00 AM EDT
MANHASSET, NY -- At MemCon today Kilopass Technology Inc. is describing its embedded VCM NVM IP bit cell technology which is said to quadruple the density of available anti-fuse NVM IP bit cells.
The Vertical Cross-point Memory bit cell will enable embedded non-volatile memory technology to be available at capacities of 4Mb to 32Mb. Until now eNVM has been limited to a 2Mb upper limit of capacity, and limited erase cycles.
“The VCM bit cell is an entirely new memory bit cell giving us an unprecedented memory density in standard logic processes from 180nm to the leading edge 20nm and beyond,” said Harry Luan, Chief Technology Officer at Kilopass Technology Inc.
The VCM bit cell technology uses one single p-mos transistor to both store and control the memory content, which reduces the footprint to 12 F2 for VCM memory, where each F describes a manufacturable feature. By comparison, a typical embedded flash memory has an area of about 50 F2.
The VCM bit cell memory technology fills an eNVM void not addressed by external components such as serial-flash/EEPROM, ROM, and embedded flash.
Kilopass will initially target wireless devices built in 55nm to 40nm technologies.
Kilopass said it has completed the process technology development and is undergoing foundry enablement. Once completed, it will be incorporated into Kilopass‘s so-called Numera few-time programmable offering.