News & Analysis
Intel to detail tri-gate advances at IEDM
Nicolas Mokhoff, Brian Fuller
12/6/2012 10:01 AM EST
CMOS on plastic
Flake plastics
IBM researchers will demonstrate high-performance state-of-the-art CMOS circuits —including SRAM memory and ring oscillators—on a flexible plastic substrate. IBM built extremely thin silicon on insulator (ETSOI) devices with a body thickness of just 60 angstroms. They used controlled spalling, a simple, low-cost room-temperature process, which flakes off the silicon substrate. The devices with gate lengths of <30 nm and a gate pitch of 100 nm were transferred to a flexible plastic tape. The ring oscillators had a stage delay of 16 ps at 0.9 V, believed to be the best reported performance for a flexible circuit, according to the researchers. A slight degradation of delay for the flexible sample after the layer transfer comes from degradation of p-FET performance due to strain effects.
(Paper #5.1, “Advanced Flexible CMOS Integrated Circuits on Plastic Enabled by Controlled Spalling Technology,” D. Shahrjerdi et al, IBM)
Spinning magnets
Researchers from Everspin Technologies will describe how they built a 64-Mb ST (spin-torque)-MRAM device with good electrical characteristics. Conventional charge-based memory is approaching fundamental scaling limits. Among various emerging memory technologies, Magnetoresistive Random Access Memories have demonstrated the capability to be successors to DRAMs or SRAMs. In MRAMs, data is stored via magnetic moments as a “0” or “1” state. Earlier generations of MRAMs the states were switched by current-induced magnetic field -- an obstacle for scaling. The ST-MRAM is switched by injecting spin-polarized tunneling current, removing the scaling limitation. Everspin’s device is the largest functional ST-MRAM circuit ever built, according to the company. The green area in the “shmoo plot,” -- a graphical display of the ST-MRAM’s performance over a range of voltages -- shows no failures of the memory as voltages increased, indicating a robust design.
(Paper #29.3, “High-Density ST-MRAM Technology,” J. Slaughter et al, Everspin Technologies)
Next: The next big thing?
Flake plastics
IBM researchers will demonstrate high-performance state-of-the-art CMOS circuits —including SRAM memory and ring oscillators—on a flexible plastic substrate. IBM built extremely thin silicon on insulator (ETSOI) devices with a body thickness of just 60 angstroms. They used controlled spalling, a simple, low-cost room-temperature process, which flakes off the silicon substrate. The devices with gate lengths of <30 nm and a gate pitch of 100 nm were transferred to a flexible plastic tape. The ring oscillators had a stage delay of 16 ps at 0.9 V, believed to be the best reported performance for a flexible circuit, according to the researchers. A slight degradation of delay for the flexible sample after the layer transfer comes from degradation of p-FET performance due to strain effects.
(Paper #5.1, “Advanced Flexible CMOS Integrated Circuits on Plastic Enabled by Controlled Spalling Technology,” D. Shahrjerdi et al, IBM)
The extremely thin silicon-on-insulator devices had a body thickness of just 60 angstroms and were then transferred them to flexible plastic tape, where only slight performance degradation was reported.
Spinning magnets
Researchers from Everspin Technologies will describe how they built a 64-Mb ST (spin-torque)-MRAM device with good electrical characteristics. Conventional charge-based memory is approaching fundamental scaling limits. Among various emerging memory technologies, Magnetoresistive Random Access Memories have demonstrated the capability to be successors to DRAMs or SRAMs. In MRAMs, data is stored via magnetic moments as a “0” or “1” state. Earlier generations of MRAMs the states were switched by current-induced magnetic field -- an obstacle for scaling. The ST-MRAM is switched by injecting spin-polarized tunneling current, removing the scaling limitation. Everspin’s device is the largest functional ST-MRAM circuit ever built, according to the company. The green area in the “shmoo plot,” -- a graphical display of the ST-MRAM’s performance over a range of voltages -- shows no failures of the memory as voltages increased, indicating a robust design.
(Paper #29.3, “High-Density ST-MRAM Technology,” J. Slaughter et al, Everspin Technologies)
Researchers from Everspin Technologies will describe how they built the largest functional spin-torque MRAM circuit ever built, a 64-Mb device with good electrical characteristics.
Next: The next big thing?
|
|
|
|
|
Navigate to related information
kjdsfkjdshfkdshfvc
12/6/2012 10:54 AM EST
what , still no nano photonics devices in the pipeline, thats a shame,
if only someone made some Plasmonic Optical Tweezers Could Trap Tiny Proteins
An innovative aperture design based on plasmonics could focus light so effectively that tiny beams could trap and manipulate particles as small as a few atoms.
or we had a fiber optic spanner to adjust new Metamaterials and so Manipulate Light on a Microchip.
we probably need lots of sellotape ‘Smart’ Claw's
and OC the usual micron-scale spatial light modulator (SLM) that works in 3-D “free space” and runs orders of magnitude faster than those used in sensing and imaging devices today..
blah blah blah :)
did everyone at IEDM also forget Continuous gas-phase synthesis of nanowires with tunable properties
http://www.nature.com/nature/journal/vaop/ncurrent/full/nature11652.html
Sign in to Reply
song-chou-1
12/6/2012 11:07 AM EST
Intel's Finfet is best thing for foundry.
Intel keeps talking finFET but is not shipping 22nm FinFET products in mobile (feature-smart-phone or tablets) now or even next year.
After 2 years just 1 design is shipping(ivy bridge).
Achronix 22nm FPGA delayed until 2013
Haswell delayed to 2nd-half 2013
14nm delayed 1 year to 2nd-half 2014
Sign in to Reply
kjdsfkjdshfkdshfvc
12/6/2012 12:26 PM EST
actually does the "celeron" count in mobile sang-chou-1 ?
if so you will be finally seeing Celeron Ivy Bridge CPU's at the same time they release Haswell in the first half of 2013.
regarding that " tiny beams could trap and manipulate particles as small as a few atoms." rather than just light i always thought we don't use sound enough in electronics and heres just such a rather cool fully working project
using Ultra Tangibles
Creating movable tangible objects on interactive tables ultrasound is focussed into a beam, creating enough force to move lightweight objects across a surface.
mesmerizing video fukk of potential :)
http://big.cs.bris.ac.uk/projects/ultratangibles
scale this down to the micro/nano scale and it could be a very usable commercial product to manipulate particles and perhaps even perform some assembly, what you think , would nano scale ultrasound destroy the graphene nanowires etc http://www.graphene-info.com/electron-conductivity-studies-graphene-nanowires at the quantum mechanical process level
along side some Twisted beams of light could increase the capacity of optical communications.
http://www.nanomagazine.co.uk/index.php?option=com_content&view=article&id=1908:twisted-beams-of-light-could-increase-the-capacity-of-optical-communications-technology&catid=38:nano-news&Itemid=159
Sign in to Reply