IEDM goes deep on 3-D circuits

Focus on entrepreneurs

The development of replacements for conventional silicon channel material seems to have sparked a lot of work in this area. One paper offers some results in terms of transistor performance achieved with Ge channels and ZrO2 gate dielectric while another describes microwave anneal techniques for Ge CMOS.

Another session combines imagers and integrated sensor topics. If you have any interest in imager technology, be it current or historical, then I recommend a presentation from Panasonic, “Evolution of Optical Structure in Image Sensors.”

As TSV technology appears poised for a commercial breakout, one paper from Tohoku University in the Device Characterization and Reliability session should be noted: “Minimizing the Deleterious Effect of Local Deformation Caused by Cu-TSVs and CuSn/InAu-Microbumps in High- Density 3D-LSIs.”

In addition to the increased focus on interfaces with newer device topologies and new channel materials, we also see renewed interest in noise characterization of both types of new devices. Check out this paper for more: “Insights in Low Frequency Noise of Advanced and High-Mobility Channel Transistors.”

Finally, Marvell co-founder Weili Dai is speaking at IEDM’s inaugural “Entrepreneurs Lunch” on Wednesday (Dec. 12).

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