Moving to Foundry 2.0
“Like all living organisms, especially those in electronics, we have to continue to evolve,” he said, adding that its time to migrate to a new model he "Foundry 2.0."
“History has shown that closed systems rarely work,” said Manocha, calling for improved collaboration that would provide a “virtual IDM-like interface” to chip design companies to help close the gap between process teams at manufacturing companies and design teams at fabless firms.
Collaboration remains the only practical approach, Manocha argued, for meeting technical challenges like 3-D stacking, 450-mm fabs, multi-patterning and the long-term viability of extreme ultraviolet (EUV) lithography.
In order to survive and thrive, foundries must move away from single sources of supply, become more flexible, more transparent and less focused on optimizing individual products.
Among the the “big four” challenges faced by Globalfoundries faced over the next three years are: packaging, the transition to 450-mm, the cost of lithography/EUV and moving to new device architectures, including super-steep retrograde wells, fully-depleted silicon-on-insulator (FDSOI) and FinFETs.
To address customer needs, Manocha said Globalfoundries would have to cycle through three nodes in three years, introducing FinFETs at 14 nm.
“It’s not easy,” Manocha said, referring to the promise of delivering on a new node every year, but Globalfoundries is trying to think like it’s customers. “If customers want 10 nm by next year, we’ll be there."
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