Forty-nm flash memory IP developed for automotive real-time applications

Renesas has announced development of what it claims is the industry's first 40- nm memory intellectual property for automotive real-time applications. The company plans to launch embedded flash microcontrollers for automotive applications using this 40-nm flash technology with samples available by the beginning of autumn 2012.

Renesas experience includes developing flash MONOS (metal oxide nitride oxide silicon) technology with high quality and reliability, and was first to launch 90-nm automotive flash MCU products in 2007.

Renesas flash MONOS technology is scalable while providing both reliability and performance. Evaluation results available from 40-nm flash test devices are said to show excellent characteristics for three critical parameters: Data retention, program/erase cycle endurance, and programming time The 40-nm process node enables integration of several functional safety-related and communication interfaces.

The Renesas 40-nm flash memory IP is designed for 20 years of data retention, and can be read up to 170C junction temperature. Additionally, the code flash supports read speed of 120 MHz, and the data flash achieves a data-retention period of 20 years even after 125,000 of program/erase cycles.

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