Product Review
EPC half bridge development board with 200 V eGaN FETs and gate drivers
Steve Taranovich2/6/2013 3:54 PM EST
Efficient Power Conversion Corporation (EPC) introduced an upgrade of a development board featuring enhancement mode gallium nitride (eGaN®) FETs using a dedicated GaN FET gate driver from Texas Instruments -- UCC27611.
The EPC9004 board demonstrates how the recent introductions of IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon FETs to eGaN technology devices simple and cost effective.
Block diagram of the EPC9004 development board shown here
This development board is a 200 V peak voltage, 2 A maximum output current, half bridge featuring the EPC2012 eGaN FET. The EPC2012 is used in combination with the UCC27611 high-speed gate driver from Texas Instruments, thus reducing time and complexity for designing high frequency, high performance power systems.
Connection and measurement setup shown
Proper measurement of switch node get the true high speed waveform with a very short ground lead on the probe to minimize inductance and ringing effects
The waveform for Vin = 150V to 5V/2A (100kHz) Buck converter
CH1: VPWM Input voltage; CH2: (Iout) Switch node current; CH4: (Vout) Switch node voltage
The 200 V EPC2012 eGaN FET is ideal for use in applications such as wireless charging, magnetic resonance imaging (MRI), and low RF frequency applications such as smart meter communications.
Visit EPC website for more details
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didymus7
2/11/2013 9:04 AM EST
Okay, that's 200V, what about the engineers that need to switch a 1200 Volt discharge from a cap? The list of possible devices is very small (list of 1 so far), GaN FETs should be able to handle that, right?
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scolino
2/12/2013 5:05 PM EST
While GaN FETs have been demonstrated to tens of thousands of volts, they have only been introduced into production up to 200 V. Several manufacturers have publically discussed development of 600 V devices. It will be a while until 1200 V devices are in production.
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