RF power transistors combine ruggedness, broadband, and range

The 25 W MRFE6VS25N and 100 W MRFE6VP100H RF power transistors offer enhanced ruggedness and wideband operation over a broad frequency range. They deliver full CW rated power over the entire operating frequency range, and boost system reliability while reducing amplifier design complexity and cost.

The devices handle impedance mismatch (VSWR) of greater than 65:1. The wideband LDMOS FETs work under extremely harsh conditions, where survivability and availability are critical. Housed in low thermal resistance packaging, the devices integrate internal networks that enhance circuit stability over a wide range of operating conditions.

The devices allow designers to use a single amplifier to cover multiple bands, such as 1.8 to 54 MHz and 30 to 512 MHz. Transistors, reference designs and support tools are available. Contact company for pricing.

For more information visit Freescale Semiconductor.