Toshiba GaN HEMTs include PA for satcom

At IMS2011, Toshiba America Electronic Components, Inc. announced the TGI1314-25L, a gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT), the latest addition to its power amplifier (PA) product family.  Optimized for Ku-band satellite communication applications, the TGI1314-25L operates in the 13.75GHz(1) to 14.5GHz range with output power of 25W.  The device features output power of +44.0dBm (typ.) with +39dBm input power, linear gain of 8.0dB (typ.) and drain current of 2.5 Amps (typ.). The new product is targeted to satcom applications including very small aperture terminals (VSAT).

Key Features:

• 13.75 – 14.5GHz
• Typ. output power:  44.0dBm @ Pin=39.0dBm
• Typ. linear gain: 8.0dB
• Min. 3rd order intermodulation: -25dBc @ Po=37.0dBm S.C.L.
• Drain current:  +24V/2.5A
• Efficiency: 29%

 
Availability:
Samples of the TGI1314-25L will be available in the third quarter 2011, with mass production scheduled for the fourth quarter 2011. For availability of samples, please contact a Toshiba representative.

More Information
Toshiba web site