Product Review
Rugged FETs span 1MHz to 2 GHz
Janine Love6/26/2012 1:30 PM EDT
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Two wideband RF power LDMOS FETs are available to meet these needs for applications from HF through L band, 1 MHz through 2 GHz. Each delivers full CW rated power over the entire operating frequency range.
The MRF6VS25N is a single transistor, with 25 W CW, a gain of more than 26 dB from 1.8 to 30 MHz, and more than 25 dB at 512 MHz. The device has an efficiency of 50 to 73% and full rated performance into >65:1 VSWR. It is housed in a TO-270-2 over-molded plastic package.
The MrFe6V100H dual transistor features 100 W CW, a gain of 26 dB at 512 MHz, more than 19 dB from 30 to 512 MHz, efficiency of 40 to 71%, and a full rated performance into >65:1 VSWR. It is housed in NI-780-4 and NI-7805-4 air cavity packages. Contact company for pricing and availability.
For more information visit Freescale Semiconductor
The MRF6VS25N is a single transistor, with 25 W CW, a gain of more than 26 dB from 1.8 to 30 MHz, and more than 25 dB at 512 MHz. The device has an efficiency of 50 to 73% and full rated performance into >65:1 VSWR. It is housed in a TO-270-2 over-molded plastic package.
The MrFe6V100H dual transistor features 100 W CW, a gain of 26 dB at 512 MHz, more than 19 dB from 30 to 512 MHz, efficiency of 40 to 71%, and a full rated performance into >65:1 VSWR. It is housed in NI-780-4 and NI-7805-4 air cavity packages. Contact company for pricing and availability.
For more information visit Freescale Semiconductor
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