Samsung samples 30nm, 32GB DDR3 RDIMMs

Samsung Electronics Co. Ltd. has released for evaluation engineering samples of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.

The new 32GB RDIMM with 3D TSV package technology is based on Samsung's 30nm-class four gigabit (Gb) DDR3. It can transmit at speeds of up to 1,333 megabits per second (Mbps), a 70 percent gain over preceding quad-rank 32GB RDIMMs with operational speeds of 800Mbps.

The 32GB-module consumes 4.5 watts per hour – the lowest power consumption level among memory modules adopted for use in enterprise servers, according to Samsung. Compared to the 30nm-class 32GB load-reduced, dual-inline memory module (LRDIMM), which offers advantages in constructing 32GB or higher memory solutions, the new 32GB module provides approximately 30 percent additional energy savings, the company added.

These savings are directly attributable to the adoption of TSV technology, which enables a multi-stacked chip to function at levels comparable to a single silicon chip by shortening signal lines significantly, thereby lowering power consumption and achieving higher density and operational speed.

Samsung said it collaborated with CPU and controller designers in addition to some current server system customers to facilitate quicker adoption of 3D-TSV server modules, and to pave the way for more easily supporting 32GB and higher-density memory modules based on 20nm-class DDR3 for use in high-capacity servers.