Ramtron energy-sipping FRAM serves low-power applications

A serial nonvolatile ferroelectric random access memory (F-RAM) memory chip uses 1/1,000th the energy of electrically erasable programmable read-only memory (EEPROM) devices, while performing write operations at bus speed with no write delays. The FM25P16 from Ramtron International Corp. sports 16 kb of ferroelectric nonvolatile RAM organized as 2,044 × 8 bits. As the first member of the Ramtron Low Energy Memory family, the chip boasts an endurance of 10¹⁴ read/write cycles and reliable data retention for 10 years. Positioned as a direct hardware replacement for EEPROM, the chip is available in an 8-pin SOIC package with an operating temperature range of -40º C to +85º C.

Power requirements

•    1.8 to 3.6 V operation
•    3.2 µA (typ.) active current at 100 kHz
•    1.2 µA (typ.) standby current
•    IDD at max = 35 µA

 
Interface

•    Serial Peripheral Interface (SPI)
•    Up to 1 MHz frequency
•    SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

The devices are well suited to nonvolatile memory applications requiring both very low power and frequent or rapid writes, such as wireless sensor nodes, remote metering, health and fitness products, and emerging energy harvesting applications.

The FM25P16 is now sampling in limited quantities with an expected resale unit price of $0.99 in 10K volume. For more information, view the data sheet or go to www.ramtron.com.

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