Product Brief
Micron DDR3L-RS targets ultra-thins
Kristin Lewotsky9/24/2012 10:44 AM EDT
A family of DDR3L-RS SDRAMs aims to improve system power use in standby in ultra-thin computers. Manufactured using a 30-nm class process technology, the 1.35-V, 2-Gb and 4-Gb devices from Micron reduce self-refresh power (IDD6).
"DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price,” says Mike Howard, senior principal analyst, DRAM and memory at IHS iSuppli, in a statement. “We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS."
Intel already has validated the products for its Ivy Bridge platform. In addition to the volume production of the 2-Gb and 4-Gb memories, Micron is sampling the DDR3L-RS in 8 Gb x 16 and x 32 for reduced board space and increase density. The company plans to launch DDR4-RS early next year.
For more information on the product family, click here.
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"DDR3L-RS is an excellent option for customers who have tight power budgets and need high performance at a competitive price,” says Mike Howard, senior principal analyst, DRAM and memory at IHS iSuppli, in a statement. “We expect many of the next-generation ultrathin platforms to take advantage of DDR3L-RS."
Intel already has validated the products for its Ivy Bridge platform. In addition to the volume production of the 2-Gb and 4-Gb memories, Micron is sampling the DDR3L-RS in 8 Gb x 16 and x 32 for reduced board space and increase density. The company plans to launch DDR4-RS early next year.
For more information on the product family, click here.
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Did you find this article of interest? Then visit the Memory Designline, where we update daily with design, technology, product, and news articles tailored to fit your world. Too busy to go every day? Sign up for our newsletter to get the week's best items delivered to your inbox. Just click here and choose the "Manage Newsletters" tab.
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