Silicon PIN photodiodes tout high radiant sensitivity in clear and black T-1 plastic packages

Vishay Intertechnology Inc. has expanded its optoelectronics portfolio with high-speed silicon PIN photodiodes that feature high radiant sensitivity and fast switching times in clear- and black-epoxy T1 plastic packages.

Offering 3 mm lenses, the TEFD4300 and TEFD4300F feature a high reverse photo current of 17 µA and a ± 20° angle of half sensitivity.

The devices are optimized for data transmission, photo interrupters, optical switches, encoders, and position sensors in metering applications. For infrared and visible light sources, the TEFD4300 is a clear epoxy device with a sensitivity range of 350 nm to 1120 nm. For light sources in the infrared wavelength range of 770 nm to 1070 nm, the TEFD4300F is a black epoxy device with a daylight blocking filter matched with 850 nm to 950 nm IR emitters.

The photodiodes offer fast switching times down to 10 ns at low load resistor values, a low 0.1 %/K temperature coefficient of light current, temperature range of −40 °C to + 100 °C, and a 950 nm wavelength of peak sensitivity. The devices are package matched with the VSLB3940, TSUS4300, and TSAL4400 IR emitter series. The photo detectors support lead (Pb)-free processing in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC, and conform to Vishay "Green" environmental specifications.

Pricing: For U.S. delivery in 5,000-piece quantities starts at $0.115 per piece.

Availability: Samples and production quantities of the TEFD4300 and TEFD4300F are available now, with lead times of four to six weeks for larger orders.

Datasheet: TEFD4300 and TEFD4300F