LNAs using pHEMT and SiGe Technologies from Skyworks

Skyworks Solutions, Inc. introduced a new suite of low noise amplifiers (LNAs) featuring pseudomorphic high electron mobility transistor (pHEMT) and silicon germanium (SiGe) technologies. The devices are designed for various industry applications including GPS; infrastructure such as GSM, WCDMA and LTE base station transceivers; ISM band and satellite radio; and WLAN markets. In addition, Skyworks is expanding into higher frequency, higher linearity, and even lower noise figures with the company's latest pHEMT7 technology and enhancement mode pHEMT devices.

Skyworks has designed these discrete pHEMT devices to achieve low noise that supports the performance requirements for modern receiver designs. The parts utilize SiGe technology to produce integrated LNA devices, which lowers cost and efficiency while adding the functionality of silicon.

About the SKY65050-372LF Low Noise Transistor

The SKY65050-372LF low noise transistor is a low noise, n-channel, depletion mode pHEMT, fabricated from Skyworks' advanced pHEMT process and packaged in a miniature 4-lead SC-70 package.

Pricing and Availability

The SKY65050-372LF is available now and priced at 25 cents each in quantities of 10,000 devices.