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Power MOSFET delivers low maximum on-resistance


11/12/2010 8:51 AM EST

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sharps_eng

11/13/2010 5:35 PM EST

I used to be a Siliconix fan, but recent experience with Vishay leadtimes ...

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Vishay Intertechnology Inc. has released a 600V, 47A n-channel power MOSFET with low maximum on-resistance of 0.07 Ω at a 10 V gate drive and an improved gate charge of 216 nC in the TO-247 package.

According to Vishay, the SiHG47N60S's 15.12 Ω-nC gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is the lowest for this device type. Low on-resistance translates into lower conduction losses that save energy in inverter circuits and pulse width modulation (PWM) full-bridge topologies in solar and wind inverters, and in telecom, server, and motor control power applications. 

The SiHG47N60S is produced using Vishay Super Junction technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The MOSFET is compliant to RoHS Directive 2002/95/EC and 100 % avalanche tested for reliable operation.

Pricing: For U.S. delivery only starts at $4.55 per piece.

Availability: Samples and production quantities are available now, with lead times of 10 to 12 weeks for larger orders.

Datasheet: Click here.





sharps_eng

11/13/2010 5:35 PM EST

I used to be a Siliconix fan, but recent experience with Vishay leadtimes zooming from 52 to 100 weeks plus, then back to 16 weeks, has left me sour. Probably because during the 100-week period we had to redesign 4 product lines to use NXP and Toshiba instead. Turned out OK for us (we will now save 50%), but badly for Vishay, because at the same time we alternate-sourced ALL our Vishay power devices, even the easily available ones.
Shows how vendors should stick to their delivery promises if at all possible.

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