ST expands high-efficiency power transistors family

STMicroelectronics NV has introduced STripFET VI DeepGATE power MOSFETs that are claimed to offer increased voltage ratings, delivering enhanced on-state and switching performance for DC-DC applications.

ST's first five STripFET VI DeepGATE power MOSFETs, dubbed 60V STP260N6F6 and STH260N6F6-2, the 75V STP210N75F6 and STH210N75F6-2, and the 80 V STL75N8LF6, can withstand maximum voltages up to 80V.

The high voltage ratings permit reliable operation in 48V telecom applications, delivering efficiency gains that help operators reduce network running costs. In addition, consumer power supplies will draw less energy and will operate at lower temperatures for improved user comfort and longer life.

Applications:
. Solar (micro-inverters)
. Telecommunications
. Networking
. Power supplies for servers

Features
• 60V and 80V breakdown voltage
• 0.0016 Ohm on-state resistance (STH260N6F6-2)
• 180A current rating (STx260F6N6)
• 100% avalanche rated

Availability and pricing:
The STP260N6F6 and STP210N75F6 in the through-hole TO-220 package are available now, priced from $3.20 in quantities of 1000; as well as the STH210N75F6-2 and STH260N6F6-2 in the surface-mount H2PAK-2 package, priced from $3.50 in quantities of 1000.

Samples of the STL75N8LF6 in the PowerFLAT 5x6 package, which reduces footprint while optimizing power-handling capabilities, will be available in the third quarter of 2011 from $1.50 in quantities of 1000. Alternative pricing options are available for larger quantities.

Datasheets
- STP260N6F6
- STP210N75F6
- STH210N75F6-2
- STH260N6F6-2
- STL75N8LF6