ST preps Rad-Hard Power MOSFETs to meet space requirements

STMicroelectronics NV (Geneva, Switzerland) has unveiled a family of radiation-hardened power MOSFETs that are qualified under the ESCC (European Space Components Coordination) specifications. Available both in packaged and die versions, they are aimed for use in electronic subsystems on board satellites and launchers.

The new radiation-hardened power MOSFET family spans current ratings from 6A to 80A and comprises five N-channel and P-channel devices, including the STRH100N10 and STRH8N10 and STRH40P10, which offer voltage ratings of 100V; and the STRH100N6 and STRH40N6 with voltage ratings of 60V. The 100-volt P-channel device has a current rating of 34A. With their low gate charge, they are suitable for use in DC power modules such as motor controllers and linear regulators, as well as line switches and e-fuses for current limiting.

ST's family Rad-Hard power MOSFETs was developed with the support of the European Space Agency and the Centre National d'Etudes Spaciales, the French government space agency.

Space-qualified power MOSFETs features:
• Fast switching performance
• 100% avalanche tested
• Hermetically sealed package
• Withstands 70/100 krad Total Ionizing Dose (TID)
• SEE radiation hardened

Availability:
The STRHxxxN10, STRHxxxN6 and STRH40P10 family are available now to EM (Engineering Model) or ESCC flight quality level, in TO254-AA and TO-39 through-hole packages. An SMD.5 surface-mount configuration is also offered. The STRH100N10 is qualified to the ESCC 5205/021 specification and the other products are expected to be ESCC qualified in the second half of 2011.