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Product Brief
MOSFETs feature high-voltage stripe technology
Ismini Scouras5/8/2012 9:15 AM EDT
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Vishay Intertechnology Inc. has started to sample the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages.
Based on a new high-voltage stripe technology, the D Series MOSFETs enable new levels of efficiency and power density. The devices' stripe design — with a smaller die size and terminations — lowers the total gate charge by 50 % compared with previous-generation products while increasing switching speed and reducing on-resistance and input capacitance.
The 400 V, 500 V, and 600 V devices feature on-resistance down to 0.17 Ω, 0.13 Ω, and 0.34 Ω, respectively. The ultra-low on-resistance values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance — a key figure of merit (FOM) for MOSFETs used in power conversion applications — down to 7.65 Ω-nC, 15.6 Ω-nC, and 12.3 Ω-nC, respectively.
The new D Series MOSFETs feature simple gate-drive circuitry and high body diode ruggedness, and they are easy to design into more compact, lighter, and cooler end products. The devices are RoHS-compliant, halogen-free according to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable operation.
Device Specification Table:
| Part # | Voltage (V) | ID @ 25 °C (A) | RDS(ON) @ max 10 V (Ω) | Qg typical (nC) | Package |
| 400 | 6 | 1.0 | 9 | TO-220 | |
| 400 | 6 | 1.0 | 9 | TO-220F | |
| 400 | 10 | 0.55 | 15 | TO-220 | |
| 400 | 10 | 0.55 | 15 | TO-220F | |
| 400 | 25 | 0.17 | 44 | TO-247 | |
| 400 | 25 | 0.17 | 44 | TO-220 | |
| 500 | 3 | 3.0 | 6 | IPAK/TO-251 | |
| 500 | 3 | 3.0 | 6 | DPAK/TO-252 | |
| 500 | 5 | 1.5 | 10 | DPAK/TO-252 | |
| 500 | 5 | 1.5 | 10 | TO-220 | |
| 500 | 5 | 1.5 | 10 | T-Max® | |
| 500 | 5 | 1.5 | 10 | IPAK/TO-251 | |
| 500 | 8 | 0.85 | 15 | TO-220 | |
| 500 | 8 | 0.85 | 15 | TO-220F | |
| SiHP14N50D* | 500 | 14 | 0.40 | 30 | TO-220 |
| SiHG14N50D* | 500 | 14 | 0.40 | 30 | TO-247AC |
| SiHF18N50D* | 500 | 18 | 0.27 | 37 | TO-220F |
| 500 | 20 | 0.25 | 85 | TO-247AC | |
| SiHG22N50D* | 500 | 22 | 0.23 | 52 | TO-247AC |
| SiHG32N50D* | 500 | 32 | 0.16 | 72 | TO-247AC |
| SiHS36N50D* | 500 | 36 | 0.13 | 92 | Super TO-247 |
| 600 | 17 | 0.34 | 45 | TO-220 | |
| 600 | 17 | 0.34 | 45 | TO-247AC |
*Target specifications, product pending
Samples of the new D Series power MOSFETs are available now. Production quantities will be available in Q3 2012, with lead times of 12 to 16 weeks for larger orders.
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