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Product Brief

MOSFETs feature high-voltage stripe technology

Ismini Scouras
5/8/2012 9:15 AM EDT

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Vishay Intertechnology Inc. has started to sample the first devices in its next-generation D Series of high-voltage power MOSFETs. The new 400 V, 500 V, and 600 V n-channel devices combine low specific on-resistance with ultra-low gate charge and currents from 3 A to 36 A in a wide range of packages. 

Based on a new high-voltage stripe technology, the D Series MOSFETs enable new levels of efficiency and power density. The devices' stripe design — with a smaller die size and terminations — lowers the total gate charge by 50 % compared with previous-generation products  while increasing switching speed and reducing on-resistance and input capacitance. 

The 400 V, 500 V, and 600 V devices feature on-resistance down to 0.17 Ω, 0.13 Ω, and 0.34 Ω, respectively. The ultra-low on-resistance values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.

With gate charges down to 9 nC for the 400 V devices, 6 nC for the 500 V devices, and 45 nC for the 600 V devices, the D Series MOSFETs offer best-in-class gate charge times on-resistance — a key figure of merit (FOM) for MOSFETs used in power conversion applications — down to 7.65 Ω-nC, 15.6 Ω-nC, and 12.3 Ω-nC, respectively. 

The new D Series MOSFETs feature simple gate-drive circuitry and high body diode ruggedness, and they are easy to design into more compact, lighter, and cooler end products. The devices are RoHS-compliant, halogen-free according to the IEC 61249-2-21 definition, and avalanche (UIS)-rated for reliable operation. 

Device Specification Table:

Part #

Voltage (V)

ID @ 25 °C (A)

RDS(ON) @ max 10 V (Ω)

Qg typical (nC)

Package

SiHP6N40D

400

6

1.0

9

TO-220

SiHF6N40D

400

6

1.0

9

TO-220F

SiHP10N40D

400

10

0.55

15

TO-220

SiHF10N40D

400

10

0.55

15

TO-220F

SiHG25N40D

400

25

0.17

44

TO-247

SiHP25N40D

400

25

0.17

44

TO-220

SiHU3N50D

500

3

3.0

6

IPAK/TO-251

SiHD3N50D

500

3

3.0

6

DPAK/TO-252

SiHD5N50D

500

5

1.5

10

DPAK/TO-252

SiHP5N50D

500

5

1.5

10

TO-220

SiHF5N50D

500

5

1.5

10

T-Max®

SiHU5N50D

500

5

1.5

10

IPAK/TO-251

SiHP8N50D

500

8

0.85

15

TO-220

SiHF8N50D

500

8

0.85

15

TO-220F

SiHP14N50D*

500

14

0.40

30

TO-220

SiHG14N50D*

500

14

0.40

30

TO-247AC

SiHF18N50D*

500

18

0.27

37

TO-220F

SiHG460B/IRFP460B

500

20

0.25

85

TO-247AC

SiHG22N50D*

500

22

0.23

52

TO-247AC

SiHG32N50D*

500

32

0.16

72

TO-247AC

SiHS36N50D*

500

36

0.13

92

Super TO-247

SiHP17N60D

600

17

0.34

45

TO-220

SiHG17N60D

600

17

0.34

45

TO-247AC

*Target specifications, product pending

Samples of the new D Series power MOSFETs are available now. Production quantities will be available in Q3 2012, with lead times of 12 to 16 weeks for larger orders.





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