30 V n-channel power MOSFETs offers industry's lowest on-resistance at 4.5 V

Vishay Intertechnology Inc. introduced the first devices in its next-generation TrenchFET Gen IV family of 30 V n-channel power MOSFETs.

Utilizing a new high-density design, the SiRA00DP, SiRA02DP, SiRA04DP, and SiSA04DN offer industry-low on-resistance down to 1.35 mΩ at 4.5 V and low Miller charge, Qgd, down to 1.8 nC in the PowerPAK® SO-8 and 1212-8 packages.

With a reduction in on-resistance times silicon area of over 60 % compared with previous-generation devices, the SiRA00DP is able to demonstrate extremely low RDS(on) values of 1.0 mΩ at 10 V and an industry-best 1.35 mΩ at 4.5 V. For designers, the MOSFETs' low on-resistance translates into lower conduction losses for reduced power consumption and higher efficiency. 

TrenchFET Gen IV MOSFETs offer a new structure that utilizes a very high-density design without significantly increasing the gate charge, overcoming a problem often associated with high cell count devices. These MOSFETs offer low total gate charge and therefore low on-resistance times gate charge figures of merit (FOM) down to 56 nC-Ω at 4.5 V for the SiRA04DP. 

Device Specification Table:

Pricing: For U.S. delivery starts at $0.34 per piece in 100,000-piece quantities.

Availability: Samples of the TrenchFET Gen IV MOSFETs are available now. Production quantities will be available in Q1 2012 with lead times of 12 weeks for large orders.

Datasheets:SiRA00DP , SiRA02DP, SiRA04DP, and SiSA04DN