IGBTs provide 20 percent reduction in total switching and conduction losses

Microsemi Corp. introduced the first in a series of new generation 1200 V non-punch through (NPT) IGBTs.

The new family of IGBTs leverages Microsemi's Power MOS 8 technology, and offers a reduction of 20 percent or more in total switching and conduction losses as compared to competitive solutions, according to Microsemi. The IGBTs are targeted at applications including welding, solar inverters, and uninterruptible and switch mode power supplies.

Microsemi's new discrete products are the APT40GR120B, APT40GR120S and APT40GR120B2D30. The devices are offered on a standalone basis or can be packaged in combination with one of Microsemi's FRED or silicon carbide Schottky diodes to simplify product development and manufacturing.

Additional features include:

• Significantly lower gate charge (Qg) than competition for faster switching;
• Hard switching operation greater than 80 KHz to enable more efficient power conversion;
• Easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications; and
• Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.

The APT40GR120B transistor is offered in a TO-247 package and the APT40GR120S is packaged in surface mount D3 PAK. The APT40GR120B2D30 is a T-MAX packaged device that includes a 30A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary "DQ" generation of low switching loss, avalanche energy rated diode technology.

Availability
The first two of Microsemi's new NPT IGBTs are fully characterized and in production now. Samples are available through your local distributor or your local Microsemi sales representative.

Additional performance information is available here.