Power management gate drivers target IGBT and SiC FETs

Texas Instruments released two new gate drivers targeting IGBT and SiC FET designs. The UCC27531 and UCC27532 output stage gate drivers are, according to TI, the industry's first 35-V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) field-effect transistors (FETs).

In a press release, TI says the designers are using SiC FETs and IGBTs in renewable energy applications to achieve lower power loss at greater than 400 V.  "The UCC27531 and UCC27532 prevent the digital controllers from operating too close to the power circuitry, extending the lifetime of isolated power designs."


Features of the UCC27531:

• Output drive capability: Peak current of 2.5 A source and 5 A sink allows fast charging of IGBTs and ensures reliable and efficient operation.
• Propagation time: 17-ns typical delay improves driver efficiency.
• High reliability: UVLO settings and rail-to-rail output voltage provide system protection.
• Handles noisy environments: Negative input voltage handling allows the driver to support many industrial designs.
• System protection: Split-output configuration improves Miller turn-on immunity and prevents damage of IGBT/MOSFET.

See press release here.

Datasheets
UCC27531DBVR
UCC27531DBVT
UCC27532DBVR
UCC27532DBVT
Power Management: MOSFET and Power Drivers parametric search