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leosteinfeld
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What about power consumption?
leosteinfeld   9/26/2013 4:29:55 PM
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Hi,

Nice article, later I found yours slice presentation at FlashMemorySummit (2008) that give rich complementary information. However, I'm interested in Flash energy consumption to complete a fair comparison between different technologies. This parameter is normally disregarded in books and so on. Please could you (or anybody) give any clue on orders of magnitude of the static consumption (specified as current/power leakage) and dynamic consumption during random read operation.

Best regards,

Leonardo

Blunk
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re: Flash memory 101: An Introduction to NAND flash
Blunk   4/30/2013 4:18:01 PM
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Bit errors can occur in the spare area as well as the main page, but the ECC algorithms accommodate the occurrence of bit errors in the check bytes.

G.SR
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re: Flash memory 101: An Introduction to NAND flash
G.SR   2/21/2011 11:59:14 AM
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Hi, We need to store ECC information while writing data to NAND. My understanding is we are doing so because, some errors might occur while reading DATA from NAND. What will happen if error occurs while reading NAND Spare Area. Is it guaranteed that no errors occur when we read from the Spare Area? Thank You & Regards, GSR



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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