Nice article, later I found yours slice presentation at FlashMemorySummit (2008) that give rich complementary information. However, I'm interested in Flash energy consumption to complete a fair comparison between different technologies. This parameter is normally disregarded in books and so on. Please could you (or anybody) give any clue on orders of magnitude of the static consumption (specified as current/power leakage) and dynamic consumption during random read operation.
We need to store ECC information while writing data to NAND.
My understanding is we are doing so because, some errors might occur while reading DATA from NAND.
What will happen if error occurs while reading NAND Spare Area. Is it guaranteed that no errors occur when we read from the Spare Area?
Thank You & Regards,
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