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markhahn0
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re: Samsung is mass producing 4-Gbit DDR3 DRAM
markhahn0   2/25/2010 1:45:41 AM
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the power-per-dimm numbers puzzle me too. the problem seems to be that the text is lifted from: http://www.samsung.com/global/business/semiconductor/newsView.do?news_id=1131 which is a slightly confused reuse of an example ("greener with ddr3") from: http://www.samsung.com/global/business/semiconductor/products/dram/DDR3/index.html the example is actually a power comparison for two 48 GB systems, one with 1.8V 1Gb ddr2 versus 1.35V 4G ddr3. rather extreme worst-case versus best-case, but it does illustrate the point. (which has to be interpreted as "minimize part count and voltage" really!)

jeffreyrdiamond
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re: Samsung is mass producing 4-Gbit DDR3 DRAM
jeffreyrdiamond   2/24/2010 7:23:17 PM
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Actually, I've often heard that in servers, nothing uses more power than the DRAM. Remember that each module here has 64 chips, compared to 16 or less for a consumer grade module. So I am not surprised at the power numbers. Notice that Samsung's 4GB module based on 16x2 gigabit, 30nm parts uses 3 watts, corresponding to 24 watts for a 32 GB module at this smaller etch size.

richardmorgan
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re: Samsung is mass producing 4-Gbit DDR3 DRAM
richardmorgan   2/24/2010 12:31:06 PM
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Guessing all the figures for power should be mW...



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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