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ughhhh
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re: ESC: Keynoter sketches out vision for electric cars
ughhhh   4/28/2010 3:44:10 PM
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Wow, a service station so 3 cabs can run 24/7!. If that is something to brag about because its difficult then welcome to the real world where we have slightly more than 3 cars. Main issue is the high cost of batteries. You could imagine swapping old worn-down batteries for practically new ones. I wonder how to solve that. Next step is standardising on a small number of batteries. If I see how many different tires are on offer I hops that will be solved as well.

Deep Think
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re: ESC: Keynoter sketches out vision for electric cars
Deep Think   4/27/2010 1:33:54 PM
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Pie in the sky or a money pit. The only way there will be even 1 percent battery vehicle ownership in the U.S. in 10 years is if the federal governement forces us to buy them. Period. Mr. Wolf and his Better Fantasy are the latest in a long line of schemers and scammers who try to persuade people to follow them down the road to the impossible.

Carl_S
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re: ESC: Keynoter sketches out vision for electric cars
Carl_S   4/26/2010 4:35:12 PM
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The battery-swap idea makes sense for a taxi company that has a regular schedule and can predict when and where they will need to swap batteries. It seems far-fetched that such a system can meet the needs of the general public. Batteries are very expensive, and it is not practical to have stacks of them waiting for customers that may not show up.

rick merritt
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re: ESC: Keynoter sketches out vision for electric cars
rick merritt   4/26/2010 4:06:49 AM
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Will EVs happen this time? What do you think?



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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