At 6X nm it's easy to go from 6F^2 to 4F^2, but not at 4X nm or below. Also, the word line is likely edge-placed so that the channel current is vertical. The gate length trades off word line resistance vs. transistor speed and current.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.