IBM told me that the turn-on slope of TFETs could be as steep as 10mV per decade, compared to a 60mV per decade limit for MOS-FETs. And the negative resistance at zero volts should reduce leakage to "almost" zero.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.