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IFTLE
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re: Volume driver spotted for 3-D TSVs
IFTLE   1/15/2011 2:50:58 PM
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This is very old news. Memory on logic as the driver for 3DIC has been proposed for years. At Semicon Taiwan this past Sept there were several talks on this including Nokia who stated that JEDEC wide I/O standardization for 3DIC will be ready in late 2011. Contrary to the comments of Mokhoff and others, both Elpida and Samsung had now announced stacked memory products for 2011/2012. 3D is fully underway. To keep up with this on a weekly basis link to: http://www.electroiq.com/index/packaging/packaging-blogs/ap-blog-display/blogs/ap-blog.html

resistion
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re: Volume driver spotted for 3-D TSVs
resistion   1/14/2011 8:19:49 AM
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@Abhijit.Deb: Doesn't the interposer use TSV?

Abhijit.Deb_#1
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re: Volume driver spotted for 3-D TSVs
Abhijit.Deb_#1   1/14/2011 7:41:58 AM
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Although the article does not say it explicitly, I assume the wide I/O DRAM is to be stacked on the logic die (SoC) of the mobile device. If we are considering a single layer of wide I/O memory being placed on top of a complex SoC, then we do not need TSV. There are cheaper technologies than TSV, for example, bump based 3D stacking. Alternatively, one can have a feed-through interposer (FTI), between the logic and memory dice, as discussed in the SMAFTI technology developed at NEC.

nicolas.mokhoff
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re: Volume driver spotted for 3-D TSVs
nicolas.mokhoff   1/13/2011 3:11:05 PM
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Last paragraph reiterates it all, about the issues of tools, complexity, integration and standards. It will take a monumental industry-wide effort to come up with feasible production line three-dimensional chips. And it needs design, process and production disciplines to come together to resolve various different approaches. The SIA/SRC collaboration and the SEMI efforts are only a starting point.

resistion
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re: Volume driver spotted for 3-D TSVs
resistion   1/13/2011 4:16:49 AM
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Case in point: http://www.pcper.com/article.php?aid=1062

resistion
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re: Volume driver spotted for 3-D TSVs
resistion   1/13/2011 4:12:07 AM
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DRAM may be a prime application, but its market is too weak to be a real enthusiastic driver until 2013.

greenpattern
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re: Volume driver spotted for 3-D TSVs
greenpattern   1/13/2011 4:02:55 AM
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DRAM packages still have thermal considerations. A TSV package will be much worse than conventional.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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