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re: GaN depo process said to make brighter LEDs
Keith.Lofstrom   3/1/2011 8:12:35 AM
Can you point to a journal or conference publication or website with more information? Starting with what "EVA" stands for - Ellipsoidal Void A???? The pictured material is probably useful for solar cells or LEDs. I can't imagine patterning repeatable transistors or circuitry if the voids were not aligned with the pattern. OTOH, perhaps they can be seeded from an etched or implanted pattern. Worth learning more about! Keith Lofstrom, Beaverton Oregon

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re: GaN depo process said to make brighter LEDs
R_Colin_Johnson   1/26/2011 11:30:13 PM
This is primarily a materials advance, but the applications are numerous and growing. LEDs are the most abundant application of GaN today, but the binary III/V material is being used to take on all sorts of high-power and high-frequency applications that the this new process could potentially improve, from the laser diodes used in Blu-Ray disks to the high-power MOSFETs used in electric cars to future spintronic devices.

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re: GaN depo process said to make brighter LEDs
wilber_xbox   1/26/2011 10:59:15 PM
good example of an accidental discovery. I recently read a quote that there is not such a thing like good or bad samples but always good or bad Phd researchers.

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re: GaN depo process said to make brighter LEDs
motti2   1/26/2011 2:21:14 PM
I think this is truly a breakthrough of huge implications potentially. GaN materials quality is either challenging or terribly expensive. Sapphire is a reasonable MOCVD substrate cost compromise, but with typically crappy films. The method described is an extension of variants of nanowire growth regimes, - the modestly well known wire to wine-glass ?denecking ( widening ) taken to extreme case, with HUGE materials growth quality results in the upper thicknesses. There is some remote possibility this method might enable a debonding film transfer process akin to a Silicon SOI handle wafer process to possibly enable reuse of the expensive sapphire by a touch repolishing step, for now that is speculative. I'd hazard that the statement "remains a laboratory curiosity" is out of place, aside from IP this method is likely to have very rapid uptake from potential licensees. The upper film quality looks orders of magnitude better than conventional films, likely leading to huge increases in potential power / efficiency with modest cost over crappy films. This bears very close watching how fast industry uptake proceeds.

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re: GaN depo process said to make brighter LEDs
nicolas.mokhoff   1/26/2011 7:50:21 AM
Interestingly incredible assertion based on a guess remains a laboratory curiosity. If the depo process yields LEDs and other devices with consistently reproducible results we can look forward to brighter solid-state lighting. It certainly bears following results of the new films.

As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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