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Kinnar
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
Kinnar   2/4/2011 4:05:50 PM
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Samsung has shrinked the memory a lot still maintaining the specification of the DDR3 unaltered it is a great achievement, this will lead towards packing more memory in the same formfactor.

Dick James
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
Dick James   2/3/2011 2:38:02 PM
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I'm blowing the EIQ trumpet, but check out http://www.electroiq.com/index/Semiconductors/sst-blogs/chipworks-blog-display/blogs/sst-blogs/chipworks/post987_3596488420747370540.html for plan-view images and more discussion.

yalanand
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
yalanand   2/3/2011 3:56:19 AM
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Why Samsung did not follow the existing naming guidelines? They are trying to create confusion by coming up with their own naming convention. I guess all the chip manufacturers should also append to letters to their naming convention 1) AA - Above world wide average 2) BA - Below world wide average. This will give clear picture if the shrink is real or just hypothetical.

resistion
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
resistion   2/2/2011 4:43:06 PM
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Ok thx Destro, but I may not go so far as to buy them.

DestroCom
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
DestroCom   2/2/2011 4:00:11 PM
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I think they sell the top-level images. You might want to contact the authors directly.

resistion
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
resistion   2/2/2011 1:16:09 PM
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Interestingly, this can also be considered equivalent to a 4F^2 cell with F=46 nm. I wonder if they could not directly pattern at the 38 nm 6F^2 design rule. Still, they could have done something like 42 nm and still get cost advantage.

resistion
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
resistion   2/2/2011 12:46:51 PM
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Using F=30 nm, this is a 9.4 F^2 cell area.

resistion
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re: Inside Samsung's 30-nm-class, 'green' DDR3 SDRAM
resistion   2/2/2011 7:55:32 AM
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Is there a top view available for the cells?



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