from the sound of it, this will not necessarily be capable of FINE Lines and Gaps simultaneously.
It sounds like the proposed dual photon will enable patterning subwavelength lines, unclear if the spacing will benefit comparably ( hence the long announced commercialization delay - possibly ).
In some low density applications, where speed of sparse transistors is paramount, this if a proper exposure machine is developed, might make say ungodly fast RF devices or low density logic possible and ?practical for production ....
The only critical aspect not discussed is line edge roughness - its process margin and its impact on useful minimum line feature size. I somehow have some skepticism re potential for minimum gaps scaling comparably with minum lines ( ie needed for VLSI designs ) per the brief description given ( ie contact holes and line spacing ).
None the less interesting advance.
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