Embedded Systems Conference
Breaking News
Comments
Newest First | Oldest First | Threaded View
<<   <   Page 2 / 2
Mark.Hewitt_#1
User Rank
Author
re: TI growing large-area graphene
Mark.Hewitt_#1   3/4/2011 5:15:56 PM
NO RATINGS
Perhaps you are not familiar with doping techniques that open the band gap in Graphene - in eetimes December the feature about IBM opening the band gap for Graphene's. We are clearly in new territory here with Graphene's however I see the functional use to far exceed the expatiations of nano tubes.

R_Colin_Johnson
User Rank
Author
re: TI growing large-area graphene
R_Colin_Johnson   3/4/2011 5:06:37 PM
NO RATINGS
Texas Instruments made clear to me that their goal is to eventually reach the wafer scale in growing graphene monolayers--the same way silicon is grown today. However, it will be many years before anybody progress from growing millimeter-scale patches to achieving the kind of control necessary for wafer scale growth.

krisi
User Rank
Author
re: TI growing large-area graphene
krisi   3/4/2011 4:26:20 PM
NO RATINGS
I don't agree GroovyGeek, I think this is the most exciting material that will eventuallu replace silicon in certain applications. Material properties are very unique. We just don't know yet all manufacturing issues...Kris

GroovyGeek
User Rank
Author
re: TI growing large-area graphene
GroovyGeek   3/4/2011 7:27:39 AM
NO RATINGS
Theoretically is the key word... Mobility in nanoribbons is more like 100-200. Furthermore graphene has no bandgap so it makes an incredibly lousy switch. Many have given up on that particular application. Graphene is the new nanotube - the next great white hope that will go nowhere, at least as far as high performance CMOS replacement is concerned.

yalanand
User Rank
Author
re: TI growing large-area graphene
yalanand   3/4/2011 3:57:30 AM
NO RATINGS
"Theoretically, graphene can achieve electron mobilities of 10,000-to-100,000 cm2/Vs." does it mean the graphene transistor will be 4 times faster than the normal CMOS transistors ?

<<   <   Page 2 / 2


Radio
LATEST ARCHIVED BROADCAST
As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

Datasheets.com Parts Search

185 million searchable parts
(please enter a part number or hit search to begin)
Like Us on Facebook
Special Video Section
The LTC®6363 is a low power, low noise, fully differential ...
Vincent Ching, applications engineer at Avago Technologies, ...
The LT®6375 is a unity-gain difference amplifier which ...
The LTC®4015 is a complete synchronous buck controller/ ...
10:35
The LTC®2983 measures a wide variety of temperature sensors ...
The LTC®3886 is a dual PolyPhase DC/DC synchronous ...
The LTC®2348-18 is an 18-bit, low noise 8-channel ...
The LT®3042 is a high performance low dropout linear ...
Chwan-Jye Foo (C.J Foo), product marketing manager for ...
The LT®3752/LT3752-1 are current mode PWM controllers ...
LED lighting is an important feature in today’s and future ...
Active balancing of series connected battery stacks exists ...
After a four-year absence, Infineon returns to Mobile World ...
A laptop’s 65-watt adapter can be made 6 times smaller and ...
An industry network should have device and data security at ...
The LTC2975 is a four-channel PMBus Power System Manager ...
In this video, a new high speed CMOS output comparator ...
The LT8640 is a 42V, 5A synchronous step-down regulator ...
The LTC2000 high-speed DAC has low noise and excellent ...
How do you protect the load and ensure output continues to ...