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nardis_miles
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re: HP discovers memristor mechanism
nardis_miles   6/23/2012 8:46:41 PM
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If this technology is dependent on hot-spots for phase transitions, I would be surprised if reliability were not an issue. They're claim of cyclability is a little suspect. How many devices are switching for 3x10^10 cycles?

elctrnx_lyf
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re: HP discovers memristor mechanism
elctrnx_lyf   5/21/2011 6:31:23 PM
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If the memristor is really capable of replacing both flash and DRAM in the future, then definitely this is a welcome news for any product. I wish HP can commercialize this in the next couple of years.

R G.Neale
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re: HP discovers memristor mechanism
R G.Neale   5/21/2011 9:19:52 AM
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Correction: the sentence in my comment above should read ...the memistor requires a phase change, this is now just another PCM phase change memory..... Apologies

R G.Neale
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re: HP discovers memristor mechanism
R G.Neale   5/20/2011 11:18:57 PM
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Colin""""Not only does an applied voltage drive the migration of oxygen vacancies in the device, but at the same time there is a current that heats it up to about 300 degrees Celsius—just enough to turn the amorphous film into a crystalline film.""" So it now appears rather than just a device that uses voltage driven migration of vacancies to change the condition of a thin region, the memristor is a phase change is required, this is now another PCM a phase change memory. It needs a temperature of 300 C to crystallize, what temperature is required to return it to the amorphous state? Or how does it return to the amorphous state and is the formation of the crystalline state a one time initial forming process into which vacancies are forced or removed to create the memory states? It will be interesting to see if the memory patent portfolio of ENER and or Ovonyx cover phase changes in materials other than chalcogenides and or materials in general, I suspect they might. If so HP might find they have more than a technology manufacturing problems to deal with.

bcarso
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re: HP discovers memristor mechanism
bcarso   5/20/2011 6:46:21 PM
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I am glad that HP survived Fiorina, and now is showing that they didn't bite off more than they could Chua.

resistion
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re: HP discovers memristor mechanism
resistion   5/19/2011 2:44:29 AM
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Colin, that is interesting to note, thanks. But for these analog operations, it is even more important to first confirm the distributions are tight. Otherwise relying on the sensitivities will lead to lots of errors. Charges jump in and out all the time even at zero current. Should we expect natural memristance fluctuations?

R_Colin_Johnson
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re: HP discovers memristor mechanism
R_Colin_Johnson   5/19/2011 2:09:51 AM
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HP is also planning to tune these sensitivities for analog operation, both to add levels for multi-bit per memristor storage, as well as for brain-like connections that become more conductivity the more you use them.

resistion
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re: HP discovers memristor mechanism
resistion   5/19/2011 1:59:32 AM
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But most if not all RRAM's other than HP's as well as PCM's, MRAM's, etc. do not exhibit such obvious sensitivities.

R_Colin_Johnson
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re: HP discovers memristor mechanism
R_Colin_Johnson   5/18/2011 11:14:03 PM
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HP is doing a good job of stepping up to the plate to fill the void in basic U.S. R&D.

R_Colin_Johnson
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re: HP discovers memristor mechanism
R_Colin_Johnson   5/18/2011 11:12:14 PM
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There are various architectural features that can be used to enable reading RRAM bit cells made with memristors without changing their value.

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