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R G.Neale
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re: Rusnano backs MRAM startup in $300M deal
R G.Neale   5/18/2011 8:29:20 AM
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MRAMs worth a try. However, if they stay with MRAM based on thermally assisted switching (TAS), using indirect cross-point heating they might find themselves with some of the same problems experienced by developers of phase change memory (PCM), who start with the advantage that the fundamental switching mechanisms for PCM are a mixture of thermal and electronic effects. For PCM even very closely coupled heater electrodes do not appear to have yet solved the problem of producing scaled "must have" phase change memory (PCM) products. The "...CNE and Crocus plan to create a Learning Center and a Development Ecosystem for advanced memory design and production in the Russian Federation...." is to be commended. Especially if they adopt the broad brush approach to all potential NV memory technologies.

R G.Neale
User Rank
Author
re: Rusnano backs MRAM startup in $300M deal
R G.Neale   5/18/2011 8:29:20 AM
NO RATINGS
MRAMs worth a try. However, if they stay with MRAM based on thermally assisted switching (TAS), using indirect cross-point heating they might find themselves with some of the same problems experienced by developers of phase change memory (PCM), who start with the advantage that the fundamental switching mechanisms for PCM are a mixture of thermal and electronic effects. For PCM even very closely coupled heater electrodes do not appear to have yet solved the problem of producing scaled "must have" phase change memory (PCM) products. The "...CNE and Crocus plan to create a Learning Center and a Development Ecosystem for advanced memory design and production in the Russian Federation...." is to be commended. Especially if they adopt the broad brush approach to all potential NV memory technologies.

SZA
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re: Rusnano backs MRAM startup in $300M deal
SZA   5/18/2011 11:37:34 AM
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Good for Crocus. However its bit strange why the alliance is focusing only on TAS MRAM, they will not only have competition with more superior STT MRAM from other players but also with vs MRAM tech. FRAM and PCM. EEtimes reported few weeks back the announcement of TI FRAM based MCUs at 130nm. According to TI (www.ti.com/fram) FRAM have interesting potentials for future. Samsung is more focused on PCM. It will be quite interesting if EEtimes can report on MRAM vs FRAM vs PCM vs other, who are the main players (IDM/others), which tech. they are backing and for what strategic markets.

SZA
User Rank
Author
re: Rusnano backs MRAM startup in $300M deal
SZA   5/18/2011 11:37:34 AM
NO RATINGS
Good for Crocus. However its bit strange why the alliance is focusing only on TAS MRAM, they will not only have competition with more superior STT MRAM from other players but also with vs MRAM tech. FRAM and PCM. EEtimes reported few weeks back the announcement of TI FRAM based MCUs at 130nm. According to TI (www.ti.com/fram) FRAM have interesting potentials for future. Samsung is more focused on PCM. It will be quite interesting if EEtimes can report on MRAM vs FRAM vs PCM vs other, who are the main players (IDM/others), which tech. they are backing and for what strategic markets.



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As data rates begin to move beyond 25 Gbps channels, new problems arise. Getting to 50 Gbps channels might not be possible with the traditional NRZ (2-level) signaling. PAM4 lets data rates double with only a small increase in channel bandwidth by sending two bits per symbol. But, it brings new measurement and analysis problems. Signal integrity sage Ransom Stephens will explain how PAM4 differs from NRZ and what to expect in design, measurement, and signal analysis.

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