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RayZ
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re: Prisons and cell phones
RayZ   5/24/2011 1:55:22 PM
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There is of course a security concern, but the primary concern is protecting the lucrative monopoly that the prison system has on phone usage.

Bob Lacovara
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re: Prisons and cell phones
Bob Lacovara   5/23/2011 5:16:36 PM
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hm, Why do you worry about privacy on a radio--that is, a cell phone? The stuff is transmitted in the clear for the most part. It doesn't take much to receive cellular transmissions, many software defined radios will do this for you. If you need privacy for a conversation (and my feeling is that if you want it, you should have it) then you need to take steps to guarantee your own encryption.

_hm
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re: Prisons and cell phones
_hm   5/23/2011 2:19:10 AM
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Will this instrument also listen to cell phones not used by jail inmates? Is use of this instrument privacy concern? How if common citizen uses this to monitor some other fellow citizen or police?

bobbyh255
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re: Prisons and cell phones
bobbyh255   5/19/2011 2:41:35 PM
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I have used this product and it has its flaws, yes it does work but its acuracy is not all that and my work 800 Mhz radio as well as the Microwave sets it off.

old account Frank Eory
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re: Prisons and cell phones
old account Frank Eory   5/18/2011 5:55:42 PM
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Since the U.S. has by far the largest per capita prison population of any nation, there should be a huge market for this device.

agk
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re: Prisons and cell phones
agk   5/18/2011 10:27:39 AM
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Illegal cell phone detector needs a receiver of all the bands of operating frequencies, a decoder,and data storage system. The software is to be so advanced that it can decode any calls received and transmitted.Quite a specific application.

Sheetal.Pandey
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re: Prisons and cell phones
Sheetal.Pandey   5/18/2011 10:13:38 AM
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Wow! Its amazing to see how in today's world, the technology can be used in almost all areas.



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michigan0 Sang Kim First, 28nm bulk is in volume manufacturing for several years by the major semiconductor companies but not 28nm FDSOI today yet. Why not? Simply because unlike 28nm bulk the LDD(Lightly Doped Drain) to minimize hot carrier generation can't be implemented in 28nm FDSOI. Furthermore, hot carrier reliability becomes worse with scaling, That is the major reason why 28nm FDSOI is not manufacturable today and will not be. Second, how can you suppress the leakage currents from such ultra short 7nm due to the short channel effects? How thin SOI thickness is required to prevent punch-through of un-dopped 7nm FDSOI? Possibly less than 4nm. Depositing such an ultra thin film less then 4nm filum uniformly and reliably over 12" wafers at the manufacturing line is extremely difficult or not even manufacturable. If not manufacturable, the 7nm FDSOI debate is over!Third, what happens when hot carriers are generated near the drain at normal operation of 7nm FDSOI? Electrons go to the positively biased drain with no harm but where the holes to go? The holes can't go to the substrate because of the thin BOX layer. Some holes may become trapped at the BOX layer causing Vt shift. However, the vast majority of holes drift through the the un-dopped SOI channel toward the N+Source,...
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