Since Toshiba doesn't make DRAM (or want to play in that market either) and it is highly unlikely for MRAM to replace NAND or HDD, I wonder if Toshiba (and Hynix) are striving to create a new application for MRAM. It seems hard to do without a customer, or when most customers are accustomed to just Flash and DRAM.
Will perpendicular MJT have better scaling characteristics than other approaches? Can it be implemented with multiple layers and multiple bits per cell? These are the types of things I'd be interested in reading about.
Technology, materials, process knowledge improves over time and a revival of MRAM technology (more than current suppliers) with spin-transfer torque magneto-resistance would be welcomed in the market. But let's give the DRAM and Flash technology a big applause since these two technologies have carried the ball for many years.
What are the engineering and design challenges in creating successful IoT devices? These devices are usually small, resource-constrained electronics designed to sense, collect, send, and/or interpret data. Some of the devices need to be smart enough to act upon data in real time, 24/7. Are the design challenges the same as with embedded systems, but with a little developer- and IT-skills added in? What do engineers need to know? Rick Merritt talks with two experts about the tools and best options for designing IoT devices in 2016. Specifically the guests will discuss sensors, security, and lessons from IoT deployments.