Technology, materials, process knowledge improves over time and a revival of MRAM technology (more than current suppliers) with spin-transfer torque magneto-resistance would be welcomed in the market. But let's give the DRAM and Flash technology a big applause since these two technologies have carried the ball for many years.
Will perpendicular MJT have better scaling characteristics than other approaches? Can it be implemented with multiple layers and multiple bits per cell? These are the types of things I'd be interested in reading about.